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学会発表

2018年

国際会議発表

1. Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
“Germanium light source monolithically integrated on Si platform” (Invited)
International Conference on Small Science 2018 (ICSS 2018), Rome, Italy, July 4, 20182.

2. Md. Mahfuz Alam, Keijiro Sato, Kosuke Sawada, Kentarou Sawano
“Structural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

3. Ryotaro Matsuoka, Eriko Shigesawa, Satoru Miyamoto, Kentarou Sawano and K.M. Itoh
“Fabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

4. Eriko Shigesawa, Masashi Fukumoto, Ryotaro Matsuoka, Ryosuke Sano, Kohei M. Itoh, Kentarou Sawano and Hiroshi Nohira
“Formation of high quality Al2O3/Ge interface by ALD directly on epitaxial Ge”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

5. K. Oki, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
“Fabrication and evaluation of Ge on Si (110) by using two-step growth method”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

6. Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi
“Effects of post annealing on in-situ n-doped Ge-on-Si”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

7. R. Sano, S. Konoshima, K. Sawano, H. Nohira
“Effect of Strain on the Binding Energy of Ge 2p and 3d core level”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

8. M. Tsukahara, M. Yamada, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
“Room-temperature magnetoresistance effect in Ge lateral spin valve devices”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

9. Michihiro Yamada, Takahiro Naito, Makoto Tsukahara, Shinya, Yamada, Kentarou Sawano, and Kohei Hamaya
“Electrical spin injection and transport in a SiGe alloy”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

10. Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
“CMOS-compatible Germanium Light Sources” (Invited)
233rd ECS Meeting, Seattle, USA, May 13-17, 2018

11. Kentarou Sawano
“Strained Ge Optoelectronic Devices Integrated on a Si Platform” (Invited)
Nanotech Malaysia 2018, Kuala Lumpur, Malaysia, May 7, 2018

雑誌掲載

・澤野憲太郎
超低消費電力・光電子融合デバイスに向けたゲルマニウムウェハー開発
MATERIAL STAGE, Vol.17, No.12, pp 57-62 (2018)

・徐学俊、澤野憲太郎
シリコンフォトニクス光配線に向けたゲルマニウム発光素子
光アライアンス, Vol. 29 , No. 5, pp 19-25 (2018)

2017年

国際会議発表

(1)Kentarou Sawano
“Controlled doping for Ge based optoelectronic devices” invited
2017 EMN/CC Meeting, Barcelona, Spain, Sep. 11-15 (2017)(2)Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
“Formation of uniaxially strained Ge by local introduction of ion implantation defects”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)(3)Ryotaro Matsuoka, Satoru Miyamoto, Kentarou Sawano, and Kohei M Itoh
“Low-Defect-Density Al2O3 Insulating Layer for Gate-Controlled Si/SiGe Quantum Dots”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)(4)Kenji Oki, Madoka Kato, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
“Effects of ion implantation defects on strain relaxation of SiGe layers on Si (110)”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)(5)Hideaki Hashimoto, Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi
“Circular distributed Bragg reflector resonators on highly n-doped Ge-on-insulator”
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)(6)Sho Matsushita, Yuta Kanda, Xu Xuejun, Kentarou Sawano, Takuya Maruizumi
“Resonant light emission from uniaxially tensile-strained Ge microbridges”
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)(7)M. Nomura, J. Nakagawa, K. Sawano, J. Maire, R. Anufriev, S. Volz
“Thermal Phonon MFP Spectrum Probing Using Phononic Crystals”
2017 MRS Spring Meeting & Exhibit, NM2.4.24, Phoenix, USA, April (2017).

2016年

国際会議発表

(1)Kentarou Sawano
“Anisotropic strain engineering of Si/Ge heterostructures” Invited
2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016) Taipei, Taiwan, Dec. 24 (2016).(2)Kentarou Sawano
“Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering” Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).(3)Kentarou Sawano
“Anisotropic Strain Introduction into Si/Ge Hetero Structures” Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).(4)H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
“Enhanced Light Emission from N-Doped Ge Microdisks by Thermal Oxidation”
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).(5)K. Sawano, K. Mizutani, K. Watanabe, X. Xu, T. Maruizumi
“Light Emission Enhancement from Ge Quantum Dots with Phosphorous -Doping”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)(6)M. Kato, T. Murakami, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
“Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)(7)H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
“Highly N-doped Ge Microdisks with Circular Bragg Gratings on Ge-on-Insulator”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)(8)Y.Arisawa, K. Sawano and N. Usami
“Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)(9)K. Sawano, K. Watanabe, K. Mizutani, X. Xu, T. Maruizumi
“Influences of Phosphorous δ-Doping at Ge Quantum Dots / Si Interface on Photoluminescence Properties and Dot Formation”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

(10)Shiori Konoshima, Eisuke Yonekura, Kentarou Sawano
“Fabrication of uniaxially strained Ge by selective ion implantation technique”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

(11)K. Arimoto, S. Yagi, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano
Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

(12)Kentarou Sawano
“Strained Ge-on-Insulator Substrates toward Optoelectronic Integrated Circuits” (Invited)
The International Conference on Small Science (ICSS 2016), Prague, Czech Republic (June 25-29, 2016)

(13)Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Kohei Hamaya
“Control of Electrical Properties in Heusler-Alloy/Ge Schottky Tunnel Contacts formed by Phosphorous δ-Doping with Si-Layer Insertion”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

(14)You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
“Thermal Stability of Compressively Strained Si/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

(15)Yuuki Yajima, Yuta Ariyama, Kentarou Sawano
“Formation of Strained Ge-on-Insulator (GOI) Substrates using SiGe Etching Stop Layers”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

(16)Yuichi Fujita, Michihiro Yamada, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Kohei Hamaya
“Room-Temperature Electrical Spin Injection and Detection in n-Ge through Co2FeSi0.5Al0.5/n+-Ge Schottky Tunnel Contacts”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

2014年

国際会議発表

(1) Eisuke Yonekura, JunjiYamanaka, KeisukeArimoto, KiyokazuNakagawa, Yasuhiro Shiraki and Kentarou Sawano
“Formation of Uniaxially Strained SiGe with High Ge Concentrations by Selective Ion Implantation”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, June 2-4, 2014 .(2) Tomonori Nagashima, Hironori Katsumata, Kohei Hamaya, Masanobu Miyao, Yasuhiro Shiraki and Kentarou Sawano
“Electrical properties of strained Ge(111)-on-Insulator (GOI) fabricated by Ge epitaxy on Si and layer transfer”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, June 2-4, 2014 .(3) Michihiro Yamada, Kentarou Sawano and Kohei. M. Itoh
“Formation of ultrashallow Ohmic contacts for n-type Ge by P delta-doping”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, June 2-4, 2014 .

2013年

国際会議発表

(1) Kentarou Sawano
“Strain engineered Si/Ge heterostructures”  (招待講演)
The International Conference on Small Science (ICSS 2013), Workshop on Nano/Micro Structure, Las Vegas, USA, December 15-18, 2013 .(2) K. Sawano, Y. Shoji, N. Funabashi, E. Yonekura, K. Nakagawa, Y. Shiraki
“Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates”
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 11-16, 2013 .(3) K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
“Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013 .(4) Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013 .(5) Shinya Yamada, Makoto Kawano, Kohei Tanikawa, Kentarou Sawano, Masanobu Miyao, Kohei Hamaya
“Epitaxial Ge/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013 .(6) K. Sawano, Y. Shoji, E. Yonekura, K. Nakagawa, and Y. Shiraki
“Formation of Uniaxially Strained Ge by Selective Ion Implantation”
E-MRS 2013 Spring Meeting, Symposium I: Strasbourg, France, May 30, 2013 .